• Skip to main content
  • Skip to secondary menu
  • Skip to primary sidebar

交大 307 實驗室

Mixed-Signal, Radio-Frequency, and Beyond

  • Home
  • About
    • 天下雜誌報導
    • 今周刊報導
    • Data Converter ICs
    • Power Management ICs
    • ESD Protection
    • Radio-Frequency VLSI
  • Faculty
    • 吳重雨
    • 吳介琮
    • 柯明道
    • 陳巍仁
    • 郭建男
    • 胡樹一
    • 王毓駒
    • 陳柏宏
  • Curriculum
  • Resources
  • Admission
    • Admission:Faculty

Regulated Charge Pump with New Clocking Scheme for Smoothing the Charging Current in Low Voltage CMOS Process

2018/01/17 By ctsai37

A regulated cross-couple charge pump with new charging current smoothing technique is proposed and verified in a 0.18-μm 1.8-V/3.3-V CMOS process. The transient behaviors of 3-stage cross-couple charge pump and the expressions for the charging current are described in detail. The experiment results show that the charging current ripples are reduced by a factor of three through using the proposed new clocking scheme. The voltage ripples in the power supply line, which is connected with the charge pump input, are also smoothed greatly as the filter circuit does. The proposed scheme is used to decrease the smoothing capacitance in the power line of charge pump for reducing the size of implantable devices in biomedical application. In addition, the power efficiency is improved. The proposed cross-couple charge pump can provide 10.5-V output voltage with 3.5-mA output current, and the power efficiency of the charge pump can be up to 69%. 

Publication: ZC Luo, MD Ker, WH Cheng, TY Yen, “Regulated Charge Pump with New Clocking Scheme for Smoothing the Charging Current in Low Voltage CMOS Process,” IEEE Trans. on Circuits and Systems I: Regular Papers, vol. 64, no. 3, pp. 528-536, Mar. 2017.

Filed Under: 研究成果

Primary Sidebar

National Chiao-Tung University · Copyright © 2022 · Log in